Laser integration on silicon for photonic integrated circuits

John E. Bowers

doi:10.1117/12.2605507

5 March 2022 Laser integration on silicon for photonic integrated circuits

John E. Bowers

Proceedings Volume PC12004, Integrated Optics: Devices, Materials, and Technologies XXVI; PC1200402 (2022) https://doi.org/10.1117/12.2605507
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

A variety of communication and sensing applications require higher levels of photonic integration and higher levels of photonic performance. Recently, many advances have been made at a variety of laboratories around the world in laser, modulator, photodetector and photonic integrated circuit performance. One example is high Q resonators on silicon (Q>200 million) resulting in 60 dB noise reduction in DFB self injection locked lasers with integrated linewidths of a few Hertz. Recent progress in InAs quantum dot lasers epitaxially grown on Si show promise for achieving lower cost and higher performance photonic integrated circuits. The discrete density of states inherent to quantum dot lasers has many benefits: 1) reduced threshold current, 2) higher temperature operation, 3) reduced linewidth enhancement factor resulting in reduced reflection sensitivity and reduced linewidth, and 4) improved reliability. Prospects and results for integration of quantum do

Conference Presentation

Citation Download Citation

John E. Bowers "Laser integration on silicon for photonic integrated circuits", Proc. SPIE PC12004, Integrated Optics: Devices, Materials, and Technologies XXVI, PC1200402 (5 March 2022); https://doi.org/10.1117/12.2605507

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