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Telecom-frequency, silicon-based impurities embedded in dielectric Mie resonators towards directional emission
Abstract: Sub-micrometric, dielectric objects featuring high permittivity and reduced absorption losses enable for efficient light management, potentially enhancing and extending the performances of opto-electronic devices [1]. The resonant scattering supported by individual dielectric antennas is generally rather broad [2] (50-100 nm for the fundamental Mie resonances at visible and near-infrared frequency). Common materials for the implementation of these devices are IV-IV-based compounds. As such, light emission in these systems has been elusive so far.
Here we use low-resolution optical lithography and plasma etching joined with solid state dewetting of crystalline, ultra-thin silicon on insulator (c-UT-SOI) to form monocrystalline, atomically-smooth, silicon-based Mie resonators in well controlled large periodic arrays. By using ion implant of carbon followed by high temperature annealing and proton implant, we activate telecom frequency, light emitting G-centers (complex impurities) within the Si-based antennas. We engineer the light emission by tuning carbon dose, beam energy and islands size in order to optimize the coupling between the emitters and the Mie resonances.
These results are relevant for the fabrication of quantum light emitters with high directivity exploiting individual G-centers embedded in sub-micrometric antennas.
References:
1. T. Liu, R. Xu, P. Yu, Z. Wang, and J. Takahara, “Multipole and multimode engineering in mie resonance-based metastructures,”Nanophotonics9 (5), 1115–1137(2020).
2. T. Coenen, J. van de Groep, and A. Polman, “Resonant modes of single silicon Nano cavities excited by electron irradiation,”ACSNano7 (2), 1689–1698(2013).
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