High-NA EUV imaging: the quest for resolution, depth-of-focus, and productivity

Eelco van Setten; Sofia Leitao; Claire van Lare; Jan van Schoot; Jo Finders; Kaustuve Bhattacharyya; Joerg Zimmermann

doi:10.1117/12.2645000

11 November 2022 High-NA EUV imaging: the quest for resolution, depth-of-focus, and productivity

Eelco van Setten, Sofia Leitao, Claire van Lare, Jan van Schoot, Jo Finders, Kaustuve Bhattacharyya, Joerg Zimmermann

Proceedings Volume PC12292, International Conference on Extreme Ultraviolet Lithography 2022; PC1229208 (2022) https://doi.org/10.1117/12.2645000
Event: SPIE Photomask Technology + EUV Lithography, 2022, Monterey, California, United States

Abstract

To enable cost-effective shrink of future devices, a new High-NA EUV platform is being developed. The High-NA EUV scanner employs a novel projection optics design concept with 0.55NA that enables 8nm HP resolution and a high throughput. In this paper we will discuss the imaging performance and technology solutions to support our customers device roadmap. We will address various aspects of high-NA EUV imaging which involves balancing key metrics like contrast for LCDU, Depth-of-Focus for defect-free process window and dose-to-size for high productivity by means of source-mask and bias optimization, wafer CD retargeting, mask stack optimization and advanced scanner corrections.

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Eelco van Setten, Sofia Leitao, Claire van Lare, Jan van Schoot, Jo Finders, Kaustuve Bhattacharyya, and Joerg Zimmermann "High-NA EUV imaging: the quest for resolution, depth-of-focus, and productivity", Proc. SPIE PC12292, International Conference on Extreme Ultraviolet Lithography 2022, PC1229208 (11 November 2022); https://doi.org/10.1117/12.2645000

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KEYWORDS

Extreme ultraviolet

Image resolution

Fiber optic illuminators

Optical design

Photomasks

Projection systems

Scanners

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