Presentation
13 March 2023 Butt-coupled mid-IR diode lasers grown on patterned Si photonic wafers
Andres Remis, Michele Paparella, Laura Monge-Bartolome, Audrey Gilbert, Marta Rio-Calvo, Guilhem Boissier, Marco Grande, Laurent Cerutti, Liam O'Faolain, Jean-Baptiste Rodriguez, Eric Tournié
Author Affiliations +
Proceedings Volume PC12426, Silicon Photonics XVIII; PC1242608 (2023) https://doi.org/10.1117/12.2649801
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
In this communication we will present the first semiconductor laser grown on a Si photonics platform in a butt-coupling configuration. A GaSb-based diode laser (DL) was grown on a patterned Si photonics wafer equipped with SiN waveguides. Growth and device fabrication challenges arising from the template architecture were overcome to demonstrate several mW outpower of emitted light in continuous wave operation at room temperature. In addition, around 10% of light was coupled into the SiN waveguides, in good agreement with theoretical calculations. This work paves the way to future on-chip sensors.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andres Remis, Michele Paparella, Laura Monge-Bartolome, Audrey Gilbert, Marta Rio-Calvo, Guilhem Boissier, Marco Grande, Laurent Cerutti, Liam O'Faolain, Jean-Baptiste Rodriguez, and Eric Tournié "Butt-coupled mid-IR diode lasers grown on patterned Si photonic wafers", Proc. SPIE PC12426, Silicon Photonics XVIII, PC1242608 (13 March 2023); https://doi.org/10.1117/12.2649801
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KEYWORDS
Semiconductor lasers

Silicon

Silicon photonics

Mid-IR

Semiconducting wafers

Quantum cascade lasers

Epitaxy

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