Aerial imaging (AIMS) based computational lithography model calibration and mask metrology for high-NA EUV

Nitesh Pandey; Stefan Hunsche; Adam Lyons; Christoph Hennerkes; Andreas Verch; Maximilian Albert; Grizelda Kersteen; Renzo Capelli; Werner Gillijns; Balakumar Baskaran; Joost Bekaert

doi:10.1117/12.2688109

12 December 2023 Aerial imaging (AIMS) based computational lithography model calibration and mask metrology for high-NA EUV

Nitesh Pandey, Stefan Hunsche, Adam Lyons, Christoph Hennerkes, Andreas Verch, Maximilian Albert, Grizelda Kersteen, Renzo Capelli, Werner Gillijns, Balakumar Baskaran, Joost Bekaert

Author Affiliations +

Proceedings Volume PC12751, Photomask Technology 2023; PC127510Z (2023) https://doi.org/10.1117/12.2688109
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Conference Poster

Abstract

OPC model accuracy is an important contributor to the EPE budget in the latest lithography nodes. The overall OPC accuracy depends on accurate calibration of the sub-models capturing mask, optical, resist and etch effects. The advent of high-NA (0.55) EUV lithography with anamorphic imaging has further increased the emphasis on accurate aerial image model calibration for computational lithography. In this paper, we study the feasibility of using direct aerial image measurements with the ZEISS AIMS EUV tool for improving OPC model accuracy as well as accurate metrology of mask pattern variability, which are both relevant to EPE budgeting.

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Nitesh Pandey, Stefan Hunsche, Adam Lyons, Christoph Hennerkes, Andreas Verch, Maximilian Albert, Grizelda Kersteen, Renzo Capelli, Werner Gillijns, Balakumar Baskaran, and Joost Bekaert "Aerial imaging (AIMS) based computational lithography model calibration and mask metrology for high-NA EUV", Proc. SPIE PC12751, Photomask Technology 2023, PC127510Z (12 December 2023); https://doi.org/10.1117/12.2688109

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