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13 March 2024 Bandgap dependence on composition of ternary GaAsP layers grown from the vapor phase
Valentin Petrov, Li Wang, Shivashankar R. Vangala, Vladimir L. Tassev
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Proceedings Volume PC12869, Nonlinear Frequency Generation and Conversion: Materials and Devices XXIII; PC128690F (2024) https://doi.org/10.1117/12.3002450
Event: SPIE LASE, 2024, San Francisco, California, United States
Abstract
Tailoring of the properties of orientation-patterned (OP) GaAs and GaP by growing mixed ternary compounds by heteroepitaxy will enable pumping by Er-fiber laser systems at 1.56 µm and idler wavelengths beyond the mid-IR limit of GaP. We will present transmission measurements and bandgap estimations related to potential two-photon absorption with 167-322-µm thick unpattrened layers of different composition with P-content of x = 0%, 33%, 39.8%, 48.3%, and 100%, after separating them from the substrate and chemically polishing to a roughness of 0.8 nm. Except for pure GaP, which exhibits also an indirect bandgap, the estimated bandgaps are well described by the empirical relation 1.424 + 1.172x + 0.186x2 for the direct band-gap, where 1.424 eV stand for GaAs. A strong absorption band is seen around 13.3 µm in GaP (present also in all ternary samples) and at 19.1 µm in GaAs. However, the parasitic absorption band in the 2-4 µm range known for pure GaP, is absent in the ternary compounds.
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Valentin Petrov, Li Wang, Shivashankar R. Vangala, and Vladimir L. Tassev "Bandgap dependence on composition of ternary GaAsP layers grown from the vapor phase", Proc. SPIE PC12869, Nonlinear Frequency Generation and Conversion: Materials and Devices XXIII, PC128690F (13 March 2024); https://doi.org/10.1117/12.3002450
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KEYWORDS
Gallium arsenide
Vapor phase epitaxy
Absorption
Chemical analysis
Mid-IR
Reflection
Semiconducting wafers
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