Fabrication and characterizations of GaN-based nanowire/multi-quantum shell (MQS) LEDs

Satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya

doi:10.1117/12.3001286

13 March 2024 Fabrication and characterizations of GaN-based nanowire/multi-quantum shell (MQS) LEDs

Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya

Proceedings Volume PC12906, Light-Emitting Devices, Materials, and Applications XXVIII; PC1290605 (2024) https://doi.org/10.1117/12.3001286
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

We found that the GaInN nanopyramids, which are obtained by the similar growth method as the nanowires, provides a high In incorporation in the growth of GaInN/GaN MQS. When we grew the GaInN pyramids with an InN molar fraction of 21 %, the MQS overgrown on the nanopyramid exhibited the cathodoluminescence (CL) peak wavelength of 620 nm, which is approximately 80 nm longer than that of the MQS simultaneously grown on the GaN nanopyramids. The CL intensity at 620 nm in the MQS/GaInN nanopyramid structure is almost the same as that at 540 nm in the MQS/GaN nanopyramid structure.

Conference Presentation

Citation Download Citation

Satoshi Kamiyama, Tetsuya Takeuchi, and Motoaki Iwaya "Fabrication and characterizations of GaN-based nanowire/multi-quantum shell (MQS) LEDs", Proc. SPIE PC12906, Light-Emitting Devices, Materials, and Applications XXVIII, PC1290605 (13 March 2024); https://doi.org/10.1117/12.3001286

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