Dependence Of Plasma Etch Rate And Uniformity On Resist Type And Processing

Albert Zelley

doi:10.1117/12.957192

17 July 1979 Dependence Of Plasma Etch Rate And Uniformity On Resist Type And Processing

Albert Zelley

Proceedings Volume 0174, Developments in Semiconductor Microlithography IV; (1979) https://doi.org/10.1117/12.957192
Event: Developments in Semiconductor Microlithography IV, 1979, San Jose, United States

Abstract

Uniformity of etch in plasma is becoming increasingly important as wafer size increases and linewidth decreases. A great deal has been written about the effects on etch rate and uniformity of the fundamental variables of system configuration, gas mixtures, gas flows, wafer loading, etc. , but little has been said about the influence of photoresist processing on etch performance. Trace residues, especially develop residues associated with a negative process, can exert a major influence on plasma etch rate and uniformity. Chemical cleaning can be used effectively to compensate for deficiencies in plasma cleaning but the use of positive resist can achieve the same uniformity and repeatability without the need for additional processing. Recognition of the extreme sensitivity of plasma etching to certain trace residues and the possible ineffectiveness of plasma cleaning opens one more door for the optimization of plasma etch uniformity and repeatability.

Citation Download Citation

Albert Zelley "Dependence Of Plasma Etch Rate And Uniformity On Resist Type And Processing", Proc. SPIE 0174, Developments in Semiconductor Microlithography IV, (17 July 1979); https://doi.org/10.1117/12.957192

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