Paper
30 April 1981 Laser-Induced Crystal Growth Measurements By Time-Resolved Optical Reflectivity
G. L. Olson, S. A. Kokorowski, J. A. Roth, R. S. Turley, L. D. Hess
Author Affiliations +
Abstract
A recently developed optical reflectivity technique for monitoring laser-induced solid phase epitaxial crystal growth in real time is described, and examples which illustrate its use in studies of solid-state kinetics in ion-implanted and UHV-deposited films are presented. Data which show the dependence of epitaxial growth rate on the position of the crystal/amorphous interface, growth rate as a function of temperature, and deviations from ideal epitaxial growth due to competing crystallization processes are presented and discussed. The laser technique represents a significant advance in experimental capabilities for measuring details of solid phase epitaxy kinetics; crystallization rates can be accurately measured at higher temperatures, and with greater temporal and spatial resolution than had been previously possible.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. L. Olson, S. A. Kokorowski, J. A. Roth, R. S. Turley, and L. D. Hess "Laser-Induced Crystal Growth Measurements By Time-Resolved Optical Reflectivity", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931698
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Reflectivity

Crystals

Laser crystals

Interfaces

Silicon

Silicon films

Solid phase epitaxy

Back to Top