Raman Scattering From Rapid Thermally Annealed Tungsten Silicide Thin Films

Howard E. Jackson; Joseph T. Boyd; U. Ramabadran; R. Vuppuladhadium

doi:10.1117/12.941943

19 January 1988 Raman Scattering From Rapid Thermally Annealed Tungsten Silicide Thin Films

Howard E. Jackson, Joseph T. Boyd, U. Ramabadran, R. Vuppuladhadium

Proceedings Volume 0822, Raman and Luminescence Spectroscopy in Technology; (1988) https://doi.org/10.1117/12.941943
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

Raman scattering as a technique for studying the formation of tungsten silicide is discussed. The tungsten silicide films were formed at temperatures up to 1350 C by rapid thermally annealing for 20 seconds tungsten films which had previously been sputter deposited on silicon substrates. The Raman data are correlated with sheet resistance measurements and scanning electron microscopy to show that rapid thermal annealing at higher temperatures for shorter times provides lower resistance tungsten silicide than reported in previous work.

Citation Download Citation

Howard E. Jackson, Joseph T. Boyd, U. Ramabadran, and R. Vuppuladhadium "Raman Scattering From Rapid Thermally Annealed Tungsten Silicide Thin Films", Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); https://doi.org/10.1117/12.941943

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