Paper
16 May 1988 Note On The Optical Oscillator Strength Of Microscopic Superlattices As Optically Active Parts Of Devices
Shigetoshi Nara
Author Affiliations +
Proceedings Volume 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics; (1988) https://doi.org/10.1117/12.943411
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
The optical oscillator strengths between valence bands and conduction band minmum in (GaAs)(AlAs)n, (GaAs)n/(AlAs)i and (GaAs)i/(AlAs)n (n =1≈10) superlattices are estimated by means of an improved tight binding method in which the overlap integrals up to the second nearest neighbor atoms, including new parameters, are explicitly taken into account. Kroemer's rule of band offset values is employed in order to investigate the influence of tetragonality of [001] superlattice structure on the optical polarizations of oscillator strength with and without the existence of spin-orbit interactions. It is indicated that the superlattices allow us to tailor band structure. The examples studied here show that this tailoring can result in a considerable sacrifice of optical oscillator strength. However the possibility remains of designing another superlattice structures without sacrifice of oscillator strength.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigetoshi Nara "Note On The Optical Oscillator Strength Of Microscopic Superlattices As Optically Active Parts Of Devices", Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); https://doi.org/10.1117/12.943411
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Superlattices

Gallium arsenide

Oscillators

Active optics

Integrated optics

Optoelectronic devices

Quantum wells

Back to Top