Gallium Arsenide Based Integrated Optoelectronic Circuits

L D Hutcheson

doi:10.1117/12.943613

31 March 1988 Gallium Arsenide Based Integrated Optoelectronic Circuits

L D Hutcheson

Proceedings Volume 0869, Technologies for Optoelectronics; (1988) https://doi.org/10.1117/12.943613
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

Integrated optoelectronic circuits consists of monolithically integrating high speed electronics with photonic devices such as light emitters and photodetectors on a common substrate. Requirements for optoelectronic integration are being driven by the needs of optical interconnects, optical communication, and optical computing and signal processing. During the past few years significant progress in this technology has been realized due to improvements in material growth, device processing and digital GaAs integrated circuit development. This paper will present a state-of-the-art review of this technology, its application to high speed systems and make projections for future developments.

Citation Download Citation

L D Hutcheson "Gallium Arsenide Based Integrated Optoelectronic Circuits", Proc. SPIE 0869, Technologies for Optoelectronics, (31 March 1988); https://doi.org/10.1117/12.943613

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