Paper
17 January 1989 Picosecond Response Of A Planar GAAS/AL0.3GA0.7AS Schottky Barrier Photodiode
D. H. Lee, S. S. Li, N. G. Paulter
Author Affiliations +
Proceedings Volume 0995, High Frequency Analog Communications; (1989) https://doi.org/10.1117/12.960146
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States
Abstract
A high-speed high-sensitivity planar GaAs/AL0.3GA0.7AS heterostructure Schottky barrier photodiode has been de-signed, fabricated, and characterized. A highly doped A10.3GA0.7AS buffer layer is used to reduce the series resistance and the undesired diffusion tailing. Furthermore, surface passivation and antireflection coating, with various dielectric films, are performed to reduce the reverse-bias dark current and the reflection loss of the incident light, thereby significantly improves the sensitivity of the photodiode. The measured external quantum efficiency and responsivity are 60% to 77% and 0.47 A/W to 0.6 A/W, respectively, for the wavelength range of 0.5 μm to 0.84 μm. A risetime of 8.5 ps and a 3-dB cutoff frequency of 50 GHz have been measured.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. H. Lee, S. S. Li, and N. G. Paulter "Picosecond Response Of A Planar GAAS/AL0.3GA0.7AS Schottky Barrier Photodiode", Proc. SPIE 0995, High Frequency Analog Communications, (17 January 1989); https://doi.org/10.1117/12.960146
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KEYWORDS
Photodiodes

Picosecond phenomena

Gallium arsenide

Diffusion

Antireflective coatings

Dielectrics

External quantum efficiency

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