Paper
23 December 2016 Optical properties of GaAs-based LED with Fresnel structure in the surface
Ivana Lettrichova, Dusan Pudis, Agata Laurencikova, Peter Gaso, Lubos Suslik, Daniel Jandura, Jana Durisova, Jozef Novak
Author Affiliations +
Proceedings Volume 10142, 20th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics; 101421P (2016) https://doi.org/10.1117/12.2264454
Event: 20th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 2016, Jasna, Slovakia
Abstract
This contribution presents implementation of one dimensional Fresnel structure in surface emitting part of the AlGaAs/GaAs multi-quantum well light emitting diode (LED).The structure consists in drilled lines distributed with square root of distance in order to obtain structures with different foci. First structure was prepared by electron beam lithography and etched directly in the emitting surface using reactive-ion etching. Second structure was prepared in the surface of thin PDMS membrane that can be stack directly on the emitting surface. The membrane is fabricated using dip in laser lithography combined with PDMS embossing. Implementation of such Fresnel structures leads in modification of LED far-field what was proved by goniophotometer measurements.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ivana Lettrichova, Dusan Pudis, Agata Laurencikova, Peter Gaso, Lubos Suslik, Daniel Jandura, Jana Durisova, and Jozef Novak "Optical properties of GaAs-based LED with Fresnel structure in the surface", Proc. SPIE 10142, 20th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 101421P (23 December 2016); https://doi.org/10.1117/12.2264454
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KEYWORDS
Light emitting diodes

Electron beam lithography

Lithography

Goniophotometry

Photoresist materials

Scanning electron microscopy

Distance measurement

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