Paper
8 March 1989 Carrier Recombination And Quantum Size Effects In The Nonlinear Optical Properties Of Semiconductor Microcrystallites
P. Roussignol, D. Ricard, C. Flytzanis, N. Neuroth
Author Affiliations +
Proceedings Volume 1017, Nonlinear Optical Materials; (1989) https://doi.org/10.1117/12.949950
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
We first recall the results of our extensive studies of the nonlinear properties of commercially available semiconductor-doped glasses which led us to a fairly complete understanding of the nonlinearity in these materials. We also observed experimentally that at high fluences, Auger recombination of free carriers is an efficient recombination process in these small crystallites. We then present recent results obtained on experimental semiconductor-doped glasses clearly exhibiting the quantum confinement effect. We observed that phonon broadening is very important in these very small Cd S Se particles. At low temperature however, spectral hole burning was observed. These results are in agreement with conventional models of electron-phonon coupling.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Roussignol, D. Ricard, C. Flytzanis, and N. Neuroth "Carrier Recombination And Quantum Size Effects In The Nonlinear Optical Properties Of Semiconductor Microcrystallites", Proc. SPIE 1017, Nonlinear Optical Materials, (8 March 1989); https://doi.org/10.1117/12.949950
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KEYWORDS
Glasses

Absorption

Particles

Semiconductors

Phonons

Roentgenium

Picosecond phenomena

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