Polarization independent asymmetric light absorption in plasmonic nanostructure

Davi Franco Rêgo; Vitaly Felix Rodriguez-Esquerre

doi:10.1117/12.2273741

25 August 2017 Polarization independent asymmetric light absorption in plasmonic nanostructure

Davi Franco Rêgo, Vitaly Felix Rodriguez-Esquerre

Proceedings Volume 10346, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XV; 103462Q (2017) https://doi.org/10.1117/12.2273741
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States

Abstract

The directional dependency of the optical coefficients, such as absorbance and reflectance, of a periodic hole plasmonic structure is numerically simulated and investigated. The tridimensional structure, which is composed of a metallic thin layer on a semiconductor matrix, is polarization independent and exhibits wide angle tolerance. It is found that the optical coefficients of the simulated structure have strong dependency to the radii of the holes due to cavity modes resonance and surface plasmon resonance. Simulations were carried out using gold and silver, varying the holes radii ranging from 40 to 70nm, as well as its depth, from 30 to 60nm of the metallic thin layer and from 100 to 200nm of the semiconductor matrix. A maximum contrast ratio of a unit was obtained. The resonant modes excited in the structure and excitation of surface plasmon polaritons in the metallic side illumination favors absorption, which explains the asymmetric behavior. We also investigate the structure’s fabrication sensitivity by randomizing the generation of center of the holes in a supercell. These findings are significant for a diverse range of applications, ranging from optical integrated circuits to solar and thermovoltaics energy harvesting.

Citation Download Citation

Davi Franco Rêgo and Vitaly Felix Rodriguez-Esquerre "Polarization independent asymmetric light absorption in plasmonic nanostructure", Proc. SPIE 10346, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XV, 103462Q (25 August 2017); https://doi.org/10.1117/12.2273741

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KEYWORDS

Plasmonics

Absorption

Absorbance

Polarization

Semiconductors

Computer simulations

Nanostructures

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