In-Situ Diagnostics For Plasma Processing

P. Banks; W. Pilz; I. Hussla; G. Lorenz; G. Castrischer

doi:10.1117/12.951013

15 March 1989 In-Situ Diagnostics For Plasma Processing

P. Banks, W. Pilz, I. Hussla, G. Lorenz, G. Castrischer

Proceedings Volume 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors; (1989) https://doi.org/10.1117/12.951013
Event: SPIE Advanced Processing Technologies for Optical and Electronic Devices (colocated wth OPTCON), 1988, Santa Clara, CA, United States

Abstract

The applications of optical emission spectroscopy and optical interferometry to the monitoring and control of plasma processes are considered. Results obtained by each method during reactive ion etching of a tri-level resist system and silicon dioxide are presented for several sets of etching parameters and a variety of mask patterns. Successful process control is illustrated by sub-micrometre size etched features in the tri-level system with aspect ratios up to 10:1. The value of each diagnostic tool is illustrated by reference to details and subtleties of the etch processes. Comparisons made between the informations obtained by each diagnostic method allow the complementary and often supplementary roles of optical emission spectroscopy and interferometry to be identified.

Citation Download Citation

P. Banks, W. Pilz, I. Hussla, G. Lorenz, and G. Castrischer "In-Situ Diagnostics For Plasma Processing", Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); https://doi.org/10.1117/12.951013

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