Semiconductor-based narrow-line and high-brilliance 193-nm laser system for industrial applications

D. Opalevs; M. Scholz; J. Stuhler; C. Gilfert; L. J. Liu; X. Y. Wang; A. Vetter; R. Kirner; T. Scharf; W. Noell; C. Rockstuhl; R. K. Li; C. T. Chen; R. Voelkel; P. Leisching

doi:10.1117/12.2290288

15 February 2018 Semiconductor-based narrow-line and high-brilliance 193-nm laser system for industrial applications

D. Opalevs, M. Scholz, J. Stuhler, C. Gilfert, L. J. Liu, X. Y. Wang, A. Vetter, R. Kirner, T. Scharf, W. Noell, C. Rockstuhl, R. K. Li, C. T. Chen, R. Voelkel, P. Leisching

Author Affiliations +

Proceedings Volume 10511, Solid State Lasers XXVII: Technology and Devices; 105112C (2018) https://doi.org/10.1117/12.2290288
Event: SPIE LASE, 2018, San Francisco, California, United States

Abstract

We present a novel industrial-grade prototype version of a continuous-wave 193 nm laser system entirely based on solid state pump laser technology. Deep-ultraviolet emission is realized by frequency-quadrupling an amplified diode laser and up to 20 mW of optical power were generated using the nonlinear crystal KBBF. We demonstrate the lifetime of the laser system for different output power levels and environmental conditions. The high stability of our setup was proven in > 500 h measurements on a single spot, a crystal shifter multiplies the lifetime to match industrial requirements. This laser improves the relative intensity noise, brilliance, wall-plug efficiency and maintenance cost significantly. We discuss first lithographic experiments making use of this improvement in photon efficiency.

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D. Opalevs, M. Scholz, J. Stuhler, C. Gilfert, L. J. Liu, X. Y. Wang, A. Vetter, R. Kirner, T. Scharf, W. Noell, C. Rockstuhl, R. K. Li, C. T. Chen, R. Voelkel, and P. Leisching "Semiconductor-based narrow-line and high-brilliance 193-nm laser system for industrial applications", Proc. SPIE 10511, Solid State Lasers XXVII: Technology and Devices, 105112C (15 February 2018); https://doi.org/10.1117/12.2290288

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