Optical, Electrical And Structural Properties Of Composite Films Made Of Si, Ge And C

Philippe M. Fauchet; Ian H. Campbell

doi:10.1117/12.951590

5 July 1989 Optical, Electrical And Structural Properties Of Composite Films Made Of Si, Ge And C

Philippe M. Fauchet, Ian H. Campbell

Proceedings Volume 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology; (1989) https://doi.org/10.1117/12.951590
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

The properties of thin films made of alloys of Si, Ge, and C are investigated with Raman spectroscopy and other, mostly non-optical, techniques. The focus is on the relationship between structural, electronic. and optical properties. Three topics are investigated: the microcrystallinity in A thick (> 1000 Å) doped SiC films, the influence of the substrate on the properties of thin (< 1000 Å ) films, and possible heterogeneities in SiGe alloys. This study is the first step towards a better understanding of the relationship between the growth parameters and the electronic and optical properties that are useful in devices.

Citation Download Citation

Philippe M. Fauchet and Ian H. Campbell "Optical, Electrical And Structural Properties Of Composite Films Made Of Si, Ge And C", Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); https://doi.org/10.1117/12.951590

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