This study explores the relationship between EUV mask stack reflectivity and horizontal to vertical pattern bias. In this computational study, the MoSi2 thickness is varied at systematic locations in the mask stack, then data on horizontal to vertical bias (H to V bias) for multiple features are gathered. The data will be used to understand the relationship between mask substrate reflectance, mask material thickness, and H to V bias. The study will also investigate the impact of high numerical aperture (0.55 NA anamorphic) imaging on the final H to V bias. Initial work indicates that a 1% variation in substrate reflectance results in approximately a 4% variation in CD. |
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Photomasks
Reflectivity
Extreme ultraviolet
Silicon
Molybdenum
Semiconducting wafers
Critical dimension metrology