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18 September 2018 III-nitride nanowire photodetectors (Conference Presentation)
Akhil Ajay, Maria Spies, Jonas Lähnemann, Jakub Polaczynski , Martien den-Hertog, Eva Monroy
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Proceedings Volume 10729, Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz; 107290A (2018) https://doi.org/10.1117/12.2322128
Event: SPIE Nanoscience + Engineering, 2018, San Diego, California, United States
Abstract
In comparison with planar devices, nanowire photodetectors present advantages in terms of miniaturization, speed, and design flexibility. III nitride nanowires are particularly suitable for spectrally-selective UV photodetection, thanks to their band gap energy and their stability against chemical, mechanical or electrical stress. However, their UV photoresponse scales sublinearly with the optical power, which hinders their introduction in applications that require power quantification. Here, we present GaN nanowires containing a single AlN/GaN/AlN heterostructure, whose response is linear with the optical power when their diameter is small enough to ensure a complete depletion of the wire due to surface states. On the other hand, III-nitride nanowires are also interesting for infrared photodetection using intersubband (ISB) transitions in nanodisks inserted in the wire. We systematically investigated ISB transitions in the near-infrared wavelengths focusing around 1.55 µm in GaN/AlN nanowire heterostructures. Attaining this short wavelength requires small GaN/AlN nanodisks (2 nm / 3 nm). Based on this study, we present the first single-nanowire quantum well infrared photodetector (NW-QWIP), observing photocurrent at 1.55 µm. Finally, we introduce an extension of the study to cover the mid-infrared spectral range, up to around 6 µm, using ISB transitions in GaN/AlGaN nanowires.
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Akhil Ajay, Maria Spies, Jonas Lähnemann, Jakub Polaczynski , Martien den-Hertog, and Eva Monroy "III-nitride nanowire photodetectors (Conference Presentation)", Proc. SPIE 10729, Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 107290A (18 September 2018); https://doi.org/10.1117/12.2322128
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KEYWORDS
Nanowires
Photodetectors
Heterojunctions
Ultraviolet radiation
Gallium nitride
Infrared photography
Infrared radiation
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