Electrical spin injection and detection in molybdenum disulfide multilayer channel (Conference Presentation)

Henri Jaffrès; Jean-Marie George; Shiheng Liang; Huaiwen Yang; Bingshan Tao; Stefan McMurtry; Sébastien Petit Watelot; Stephane Mangin; Pierre Renucci; Xavier Marie; Yuan Lu

doi:10.1117/12.2320096

18 September 2018 Electrical spin injection and detection in molybdenum disulfide multilayer channel (Conference Presentation)

Henri Jaffrès, Jean-Marie George, Shiheng Liang, Huaiwen Yang, Bingshan Tao, Stefan McMurtry, Sébastien Petit Watelot, Stephane Mangin, Pierre Renucci, Xavier Marie, Yuan Lu

Author Affiliations +

Proceedings Volume 10732, Spintronics XI; 1073227 (2018) https://doi.org/10.1117/12.2320096
Event: SPIE Nanoscience + Engineering, 2018, San Diego, California, United States

Abstract

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS2 channel with a Co/MgO tunnelling spin injector and detector [1]. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with an in-plane spin polarization. The long spin diffusion length (approximately 235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides. In this talk, we will present the main issues of the spin-injection problem at ferromagnet/Tunnel barrier/MoS2 interfaces as well as the spin-propagation in multilayered channel like played by MoS2 involving Schottky depletion layers giving thus an extension to earlier modeling of spin-injection in ferromagnet/ssource/ferromagnet systems [2-3]. [1] Shiheng Liang et al., Nat. Comm. 8, 14947 (2017) [2] A. Fert, H. Jaffrès, Phys Rev B64, 184420, 2001 [3] A. Fert, J.-M. George, H. Jaffrès, R. Mattana, IEEE, 54, 921-932 (2007)

Conference Presentation

Citation Download Citation

Henri Jaffrès, Jean-Marie George, Shiheng Liang, Huaiwen Yang, Bingshan Tao, Stefan McMurtry, Sébastien Petit Watelot, Stephane Mangin, Pierre Renucci, Xavier Marie, and Yuan Lu "Electrical spin injection and detection in molybdenum disulfide multilayer channel (Conference Presentation)", Proc. SPIE 10732, Spintronics XI, 1073227 (18 September 2018); https://doi.org/10.1117/12.2320096

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Molybdenum

Semiconductors

Interfaces

Magnetic semiconductors

Resistance

Spintronics

Electron transport

Show All Keywords

Keywords/Phrases

Search In:

Publication Years