Paper
25 November 2018 Benchmarking of EUV lithography line/space patterning versus immersion lithography multipatterning schemes at equivalent pitch
Angélique Raley, Chris Mack, Sophie Thibaut, Eric Liu, Akiteru Ko
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Abstract
In this paper, the authors compare and contrast the line/space patterning performance of direct print EUV to multipatterning schemes at equivalent pitch using a systematic unbiased PSD analysis approach for the 7nm and 5nm logic node critical BEOL layers. The authors highlight where innovation is needed to move forward with EUV in terms of line edge roughness (LER), line width roughness (LWR) performance.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Angélique Raley, Chris Mack, Sophie Thibaut, Eric Liu, and Akiteru Ko "Benchmarking of EUV lithography line/space patterning versus immersion lithography multipatterning schemes at equivalent pitch", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 1080915 (25 November 2018); https://doi.org/10.1117/12.2501680
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Line width roughness

Line edge roughness

Extreme ultraviolet

Optical lithography

Image filtering

Etching

Scanning electron microscopy

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