Paper
12 December 2018 Research on high-frequency modulation characteristics of semiconductor laser
Zhaohui Liu, Xizheng Ke, Ying Wang, Benkang Yin
Author Affiliations +
Proceedings Volume 10844, Advanced Laser Technology and Applications; 108440F (2018) https://doi.org/10.1117/12.2504858
Event: International Symposium on Optoelectronic Technology and Application 2018, 2018, Beijing, China
Abstract
For the problem of low modulation rate and narrow modulation bandwidth of semiconductor lasers(LD),according to the LD rate equation, the expression of the relaxation oscillation frequency is derived.The influence of internal parameters on the modulation characteristics of laser is simulated from two aspects: time domain and frequency domain. The simulation results verify the correctness of the theoretical derivation. In addition, measures for improving the modulation characteristics of lasers are proposed. The results show that the larger modulation bandwidth and higher modulation rate can be achieved by increasing the steady state photon density and differential gain coefficient and reducing the photon lifetime and the gain saturation factor.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhaohui Liu, Xizheng Ke, Ying Wang, and Benkang Yin " Research on high-frequency modulation characteristics of semiconductor laser", Proc. SPIE 10844, Advanced Laser Technology and Applications, 108440F (12 December 2018); https://doi.org/10.1117/12.2504858
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KEYWORDS
Modulation

Semiconductor lasers

Pulsed laser operation

Reflectivity

Laser applications

Quantum wells

Mirrors

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