Paper
12 December 2018 Negative differential capacitance in InGaAs/InAlAs photodetector
Junxi Zhang, Jun Chen
Author Affiliations +
Proceedings Volume 10846, Optical Sensing and Imaging Technologies and Applications; 1084627 (2018) https://doi.org/10.1117/12.2505396
Event: International Symposium on Optoelectronic Technology and Application 2018, 2018, Beijing, China
Abstract
Negative differential capacitance (NDC) has been observed in InGaAs/InAlAs p-i-n photodetector. The frequency dependence of the NDC is observed at the frequency of 50~300kHz. A model involving two states is built to explain the observed NDC behavior. Low dark current is obtained at room temperature with the 1550nm wavelength infrared light.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Junxi Zhang and Jun Chen "Negative differential capacitance in InGaAs/InAlAs photodetector", Proc. SPIE 10846, Optical Sensing and Imaging Technologies and Applications, 1084627 (12 December 2018); https://doi.org/10.1117/12.2505396
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KEYWORDS
Capacitance

Photodetectors

Heterojunctions

Electrons

Doping

Aluminum

Gallium

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