Characteristics Of A Developer For Spray Puddle Develop Processes

T. Perera

doi:10.1117/12.953060

30 January 1989 Characteristics Of A Developer For Spray Puddle Develop Processes

T. Perera

Proceedings Volume 1086, Advances in Resist Technology and Processing VI; (1989) https://doi.org/10.1117/12.953060
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

This paper studies the requirements for, and the performance of, a developer suitable for spray puddle develop processes. The surface tension of the developer has to be lowered, by adding a surfactant, to avoid "pullback" of the developer during puddling. It is shown that this develop process is sensitive to a variety of parameters due to the effect of resist loading on the surface tension of the developer. Optimization of a spray puddle develop process has been done for AZ1500, AZ1300, AZP4000 and AZ5200 resists. Results include dose requirements, exposure latitude and across wafer linewidth uniformity for the optimized develop cycle. A response surface analysis on the exposure and focus latitudes in spray puddle develop mode has been done. It has been observed that the developer also affects the thermal characteristics of a photoresist. This study shows that the surfactant added does not degrade the thermal stability or any other performance parameters of resists and does not cause reticulation of the resist during plasma etch. This developer can be used in spray and batch mode too.

Citation Download Citation

T. Perera "Characteristics Of A Developer For Spray Puddle Develop Processes", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953060

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