Statistically Developed Single Layer Liftoff For Sputtered Films

Ron Alderman; Pam Lou

doi:10.1117/12.953044

30 January 1989 Statistically Developed Single Layer Liftoff For Sputtered Films

Ron Alderman, Pam Lou

Proceedings Volume 1086, Advances in Resist Technology and Processing VI; (1989) https://doi.org/10.1117/12.953044
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

A statistically developed process is described that uses the unique advantages of the AZ* 5200 reversible tone resist to produce severe retrograde slopes and accommodate a sputtered liftoff patterning. Precision thin film resistors were used in the development to measure the variability and repeatability of the process. The single level liftoff technique offers cost and processing advantages over more complicated systems.

Citation Download Citation

Ron Alderman and Pam Lou "Statistically Developed Single Layer Liftoff For Sputtered Films", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953044

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