Surface Characterization Of Aluminum Substrates Exposed To Photoresist Developers

K. A. Graziano; C. S. Allen; Hua-Yu Liu

doi:10.1117/12.953046

30 January 1989 Surface Characterization Of Aluminum Substrates Exposed To Photoresist Developers

K. A. Graziano, C. S. Allen, Hua-Yu Liu

Proceedings Volume 1086, Advances in Resist Technology and Processing VI; (1989) https://doi.org/10.1117/12.953046
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

Surface composition of aluminized substrates after exposure to sodium silicate buffered and non-buffered alkaline developers is described. Variable angle x-ray photoelectron scattering (XPS) reveals that sodium silicate buffered alkaline developers form a protective aluminosilicate film on the wafer surface which inhibits aluminum erosion. The elemental composition and possible mechanisms of film formation are presented. Aluminum-copper alloy sputtered wafers are more susceptible to etch by non-buffered alkaline developers than non-alloyed aluminum sputtered wafers.

Citation Download Citation

K. A. Graziano, C. S. Allen, and Hua-Yu Liu "Surface Characterization Of Aluminum Substrates Exposed To Photoresist Developers", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953046

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