Process Sensitivity Analysis: Application to Photolithography

Philippe Schoenborn; Nicholas F. Pasch

doi:10.1117/12.953101

19 July 1989 Process Sensitivity Analysis: Application to Photolithography

Philippe Schoenborn, Nicholas F. Pasch

Proceedings Volume 1087, Integrated Circuit Metrology, Inspection, and Process Control III; (1989) https://doi.org/10.1117/12.953101
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

A computer program has been developed for the purpose of estimating process sensitivity and improving process robustness. In this paper the linewidth of polysilicon gates as a function of the photolithographic process parameters is analyzed. First, a model of the linewidth is obtained using the method of Statistical Design of Experiments and the Response Surface Methodology (RSM). Using such models, the program computes the breadth of linewidth variations that can result from simultaneous variations in the process parameters. This method of doing the sensitivity analysis offers significant advantages over one-parameter at a time studies, Taguchi methods, and contour plots of desirability regions.

Citation Download Citation

Philippe Schoenborn and Nicholas F. Pasch "Process Sensitivity Analysis: Application to Photolithography", Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); https://doi.org/10.1117/12.953101

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