Repair Of Dear Defects On X-Ray Masks By Ion-Induced Metal Deposition

Hans-Christian Petzold; Helmut Burghause; Renate Putzar; Uwe Weigmann; Nicholas P. Economou; Lewis A. Stern

doi:10.1117/12.968513

1 August 1989 Repair Of Dear Defects On X-Ray Masks By Ion-Induced Metal Deposition

Hans-Christian Petzold, Helmut Burghause, Renate Putzar, Uwe Weigmann, Nicholas P. Economou, Lewis A. Stern

Proceedings Volume 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII; (1989) https://doi.org/10.1117/12.968513
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

To investigate the repair of clear defects on X-ray masks by ion-induced metal deposition, a photomask repair system was modified to allow for the localized deposition of tungsten from a gas jet of W(CO)₆ vapor. With this system, dense W layers could be deposited at rates of up to 4 nm/s; the X-ray opacity of layers having a thickness of down to 200 nm was demonstrated by X-ray lithographic resist exposures using synchrotron radiation.

Citation Download Citation

Hans-Christian Petzold, Helmut Burghause, Renate Putzar, Uwe Weigmann, Nicholas P. Economou, and Lewis A. Stern "Repair Of Dear Defects On X-Ray Masks By Ion-Induced Metal Deposition", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); https://doi.org/10.1117/12.968513

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