Presentation + Paper
4 March 2019 High yield, highly manufacturable high-power wavelength stabilized DBR diode laser
R. Paoletti, S. Codato, C. Coriasso, F. Gaziano, P. Gotta, A. Maina, G. Meneghini, G. Morello, P. De Melchiorre, G. Pippione, I. Rigo, E. Riva, M. Rosso, A. Stano, M. Gattiglio
Author Affiliations +
Proceedings Volume 10900, High-Power Diode Laser Technology XVII; 109000I (2019) https://doi.org/10.1117/12.2510510
Event: SPIE LASE, 2019, San Francisco, California, United States
Abstract
This paper reports a DBR High Power Diode Laser (DBR-HPDL) realization, emitting up to 14W CW in the 920nm range. Key feature is the use of a multiple-order Electron Beam Lithography (EBL) optical confining grating, stabilizing on same wafer multiple wavelengths by a manufacturable and reliable technology. In present paper, on the same wafer, three pitches DBR-HPDLs 2.5nm spaced have been demonstrated with excellent characteristics of power, spectral purity and stability. Moreover, excellent uniformity of performances across the wafer with different emitted wavelengths demonstrates the maturity of proposed technology for high yield, high volume laser diode production for wavelength stabilized applications.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Paoletti, S. Codato, C. Coriasso, F. Gaziano, P. Gotta, A. Maina, G. Meneghini, G. Morello, P. De Melchiorre, G. Pippione, I. Rigo, E. Riva, M. Rosso, A. Stano, and M. Gattiglio "High yield, highly manufacturable high-power wavelength stabilized DBR diode laser", Proc. SPIE 10900, High-Power Diode Laser Technology XVII, 109000I (4 March 2019); https://doi.org/10.1117/12.2510510
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KEYWORDS
Semiconducting wafers

High power lasers

Diodes

Semiconductor lasers

Optics manufacturing

Electron beam lithography

Manufacturing

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