Monolithic integration of opto-electronics by silicon photonics foundry service

Shuxia Li; N. Garry Tarr; Winnie N. Ye

doi:10.1117/12.2510477

4 March 2019 Monolithic integration of opto-electronics by silicon photonics foundry service

Shuxia Li, N. Garry Tarr, Winnie N. Ye

Proceedings Volume 10922, Smart Photonic and Optoelectronic Integrated Circuits XXI; 1092217 (2019) https://doi.org/10.1117/12.2510477
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

We have successfully fabricated electronic and photonic components on the same substrate using a standard process offered by public silicon photonics foundry service. As we adopted the standard process parameters offered by A*STAR’s Institute of Microelectronics (IME), the design and fabrication of the n- and p-regions of the electronic devices are limited to the specific parameters optimized for creating optical waveguide modulators and photodetectors. In this work, we chose to fabricate and integrate Lateral Bipolar Transistors (LBJTs) and Junction Field Effect Transistors (JFETs) transimpedance amplifiers with Ge waveguide photodetectors, as well as on-chip photonic components such as grating couplers, submicron strip waveguides and PN depletion modulators. Our experimental results shows rectifying Ge photodiode characteristics and demonstrates full integration for sensing applications.

Conference Presentation

Citation Download Citation

Shuxia Li, N. Garry Tarr, and Winnie N. Ye "Monolithic integration of opto-electronics by silicon photonics foundry service", Proc. SPIE 10922, Smart Photonic and Optoelectronic Integrated Circuits XXI, 1092217 (4 March 2019); https://doi.org/10.1117/12.2510477

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