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4 March 2019 High-performance AlGaN deep ultraviolet LEDs with sputtered-AlN technology (Conference Presentation)
Chang-Cheng Chuo, ChenKe Hsu
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Proceedings Volume 10940, Light-Emitting Devices, Materials, and Applications; 1094007 (2019) https://doi.org/10.1117/12.2514626
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) have attracted much attention due to the potential applications in water purification, sterilization, and phototherapy etc[1]. However, the emission efficiency is still much lower than GaN-based blue LEDs because of the poor buffer quality, light extraction efficiency and carrier injection efficiency. In this study, sputtering technology was adopted to form the AlN nucleation layer and high-quality AlN buffer layer was grown by MOCVD. The full width at half maximum (FWHM) of X-ray diffraction (002) and (102) are <50 and <320 arcsec, respectively. Based on this technology, high-performance AlGaN DUV-LEDs with output power of ~32mW at operation current of 100mA was demonstrated.
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Chang-Cheng Chuo and ChenKe Hsu "High-performance AlGaN deep ultraviolet LEDs with sputtered-AlN technology (Conference Presentation)", Proc. SPIE 10940, Light-Emitting Devices, Materials, and Applications, 1094007 (4 March 2019); https://doi.org/10.1117/12.2514626
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KEYWORDS
Deep ultraviolet
Light emitting diodes
Aluminum nitride
Blue light emitting diodes
Metalorganic chemical vapor deposition
Phototherapy
Sputter deposition
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