Remote plasma chemical vapour deposition of group III-nitride tunnel junctions for LED applications

S. Barik; D. Liu; J. D. Brown; M. Wintrebert-Fouquet; A. J. Fernandes; P. P.-T. Chen; Q. Gao; V. Chan; I. Mann

doi:10.1117/12.2513261

1 March 2019 Remote plasma chemical vapour deposition of group III-nitride tunnel junctions for LED applications

S. Barik, D. Liu, J. D. Brown, M. Wintrebert-Fouquet, A. J. Fernandes, P. P.-T. Chen, Q. Gao, V. Chan, I. Mann

Proceedings Volume 10940, Light-Emitting Devices, Materials, and Applications; 1094018 (2019) https://doi.org/10.1117/12.2513261
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

The low growth temperature technology Remote Plasma Chemical Vapour Deposition (RPCVD) is currently being developed by BluGlass Ltd. for use in high-brightness LED applications. The unique growth conditions of RPCVD are demonstrated to produce Activated As-Grown (AAG) buried p-GaN for achieving GaN-based tunnel junctions (TJ) for use in current spreading and potential use in cascade LED and LD applications. Hybrid RPCVD/MOCVD TJs were grown on commercial full blue LEDs, and all-RPCVD TJs were grown on commercial partially completed blue LEDs and the devices were processed into 1.1 mm x 1.1mm chips. The LEDs with hybrid TJ displayed a 4.4% increase in light output power (LOP) and an increase in forward voltage (Vf) of 0.68 V compared to LEDs using indium-tin oxide (ITO) at a current density of 26 A/cm². The LEDs with all-RPCVD TJs displayed a 3.6% increase in LOP and an increase in Vf of 0.88 V at 26 A/cm².

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Citation Download Citation

S. Barik, D. Liu, J. D. Brown, M. Wintrebert-Fouquet, A. J. Fernandes, P. P.-T. Chen, Q. Gao, V. Chan, and I. Mann "Remote plasma chemical vapour deposition of group III-nitride tunnel junctions for LED applications", Proc. SPIE 10940, Light-Emitting Devices, Materials, and Applications, 1094018 (1 March 2019); https://doi.org/10.1117/12.2513261

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