Presentation + Paper
26 March 2019 Electrical validation of the integration of 193i and DSA for sub-20nm metal cut patterning
Chi-Chun Liu, Richard Farrell, Kafai Lai, Yann Mignot, Eric Liu, Jing Guo, Yasuyuki Ido, Makoto Muramatsu, Nelson Felix, David Hetzer, Akiteru Ko, John Arnold, Daniel Corliss
Author Affiliations +
Abstract
The progress of using DSA for metal cut to achieve sub-20nm tip-to-tip (t2t) critical dimension (CD) is reported. Small and uniform t2t CD is very challenging due to lithographic limitation but holds the key to backend-of-the-line (BEOL) scaling. An integration scheme is demonstrated that allows the combination of design flexibility and fine, rectified local CD uniformity (LCDU). Functional electrical testable Via-Chain structure is fabricated to verify the integrity of the proposed method. Through the analysis of the observed failure modes, the process is further improved. By validating DSA for such an important patterning element as metal cut, the DSA maturity can be further advanced and hopefully move DSA closer to HVM adoption.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chi-Chun Liu, Richard Farrell, Kafai Lai, Yann Mignot, Eric Liu, Jing Guo, Yasuyuki Ido, Makoto Muramatsu, Nelson Felix, David Hetzer, Akiteru Ko, John Arnold, and Daniel Corliss "Electrical validation of the integration of 193i and DSA for sub-20nm metal cut patterning", Proc. SPIE 10958, Novel Patterning Technologies for Semiconductors, MEMS/NEMS, and MOEMS 2019, 109580L (26 March 2019); https://doi.org/10.1117/12.2515862
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KEYWORDS
Metals

Critical dimension metrology

Etching

Directed self assembly

Optical lithography

Back end of line

Lithography

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