Compact modeling of electrical characteristics of p-MNOS based RADFETs

E. Mrozovskaya; P. Zimin; P. Chubunov; G. Zebrev

doi:10.1117/12.2521703

15 March 2019 Compact modeling of electrical characteristics of p-MNOS based RADFETs

E. Mrozovskaya, P. Zimin, P. Chubunov, G. Zebrev

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110220I (2019) https://doi.org/10.1117/12.2521703
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

We simulated in this work the electrical characteristics of p-MNOS based dosimeters before and after irradiation. The parameters of dose sensitivity for the samples irradiated in the different electric modes of operation were obtained. A good agreement between simulation and the measurement results was shown.

Citation Download Citation

E. Mrozovskaya, P. Zimin, P. Chubunov, and G. Zebrev "Compact modeling of electrical characteristics of p-MNOS based RADFETs", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220I (15 March 2019); https://doi.org/10.1117/12.2521703

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