Paper
15 March 2019 Effect of Ar ion-plasma treatment on residual stress in thin Cr films
Author Affiliations +
Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 1102223 (2019) https://doi.org/10.1117/12.2521617
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation
Abstract
The results of investigation of the effect of ion-plasma treatment in Ar plasma with ion energies εi = 15-30 eV on residual stress in thin Cr films are presented. Mean stress depending on εi and treatment time t was determined using Xray diffractometry and test microbridges, stress gradient was determined using test microcantilevers. The Cr films initially had compressive stress and a positive value of the stress gradient that is they had greater compressive stress near the interface than near the surface. The treatments at εi = 15-25 eV, t = 15-45 min led to increase in compressive stress. The treatments of Cr films at εi = 25-30 eV, t = 60 min led to decrease of the initial compressive stress. The stress gradient after ion-plasma treatment at εi above 15 eV increased. The higher the ion energy or the longer the treatment time, the greater the value of the stress gradient.
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A. Babushkin, R. Selyukov, and I. Amirov "Effect of Ar ion-plasma treatment on residual stress in thin Cr films", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102223 (15 March 2019); https://doi.org/10.1117/12.2521617
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KEYWORDS
Ions

Chromium

Diffusion

Argon

Thin films

Bridges

Sputter deposition

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