Hot carrier reliability of radiation hardened T-gate PD SOI NMOSFET after TID radiation

Jinghao Zhao; Jiangwei Cui; Qiwen Zheng; Hang Zhou; Xiaowen Liang; Xuefeng Yu; Qi Guo

doi:10.1117/12.2521943

12 March 2019 Hot carrier reliability of radiation hardened T-gate PD SOI NMOSFET after TID radiation

Jinghao Zhao, Jiangwei Cui, Qiwen Zheng, Hang Zhou, Xiaowen Liang, Xuefeng Yu, Qi Guo

Proceedings Volume 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application; 1102320 (2019) https://doi.org/10.1117/12.2521943
Event: Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 2018, Xi'an, China

Abstract

TID(total dose effect) and HCI(hot carrier injection) are hot issues of space application devices research in recent years. Previous studies drew the conclusion that TID radiation harden process can restrain HCI effectively. However, there have few reliability studies on radiation hardened device reported. In this article, the author irradiates RH T-Gate PD SOI NMOS and conduct a hot carrier experiment afterwards. He makes a detailed analysis of RH devices’ hot carrier reliability in different structure and reach a conclusion that radiation-induced HCI enhancement effect still exists in RH SOI experienced TID radiation because of the presence of buried oxide, which is contrary to results of previous studies on bulk silicon devices.

Citation Download Citation

Jinghao Zhao, Jiangwei Cui, Qiwen Zheng, Hang Zhou, Xiaowen Liang, Xuefeng Yu, and Qi Guo "Hot carrier reliability of radiation hardened T-gate PD SOI NMOSFET after TID radiation", Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 1102320 (12 March 2019); https://doi.org/10.1117/12.2521943

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