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10 September 2019 Giant room temperature Rashba Edelstein effect in graphene/2H-TaS2 van der Waals heterostructures (Conference Presentation)
Sungjae Cho
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Proceedings Volume 11090, Spintronics XII; 110901Z (2019) https://doi.org/10.1117/12.2528246
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States
Abstract
With great potential in spintronic applications due to the long spin diffusion length, graphene shows limitations in the manipulation of spins due to the small spin-orbit coupling (SOC). Recently, spin Hall effect (SHE) or Rashba-Edelstein effect (REE) has been predicted in a SOC-enhanced graphene by proximity to transition metal dichalcogenides. Here, we report the first observation of REE and inverse REE (IREE) in graphene proximity-coupled to 2H-TaS2. Gate voltage and magnetic field dependence of the nonlocal measurements exclude SHEs both in TaS2 and in graphene as the origins of our observation. At room temperature, we have demonstrated large gate-tunable inverse Rashba-Edelstein length λ_IREE from zero near the charge neutral point of graphene/TaS2 to > 10nm at increased Fermi levels. Our findings open up new opportunities in spintronics towards the efficient generation, manipulation and detection of spins by graphene at room temperature.
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Sungjae Cho "Giant room temperature Rashba Edelstein effect in graphene/2H-TaS2 van der Waals heterostructures (Conference Presentation)", Proc. SPIE 11090, Spintronics XII, 110901Z (10 September 2019); https://doi.org/10.1117/12.2528246
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KEYWORDS
Graphene
Heterojunctions
Spintronics
Diffusion
Magnetism
System on a chip
Transition metals
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