Electrical nonlinearities in field effect transistors and their applications for terahertz autocorrelation measurements (Conference Presentation)

Alvydas Lisauskas; Kestutis Ikamas; Ignas Nevinskas; Arunas Krotkus; Hartmut G. Roskos

doi:10.1117/12.2531356

12 September 2019 Electrical nonlinearities in field effect transistors and their applications for terahertz autocorrelation measurements (Conference Presentation)

Alvydas Lisauskas, Kestutis Ikamas, Ignas Nevinskas, Arunas Krotkus, Hartmut G. Roskos

Author Affiliations +

Proceedings Volume 11124, Terahertz Emitters, Receivers, and Applications X; 111240Z (2019) https://doi.org/10.1117/12.2531356
Event: SPIE Optical Engineering + Applications, 2019, San Diego, California, United States

Abstract

Utilization of sources generating short optical pulses requires techniques for the monitoring of the temporal characteristics of the pulses. The monitoring is often performed by an interferometric autocorrelation technique with detectors which possess higher-order nonlinearity. In the optical and mid-infrared spectral domains, one often employs quadratic detection exploiting two-photon absorption or sum-frequency generation. In the THz frequency domain, ﬁnding convenient detectors for the monitoring of pulsed sources remains to be a challenge. One option is quantum-engineered devices, exploiting, for example, intersubband transitions, but due to the low THz photon energy, such detectors require cryogenic cooling. Recently, we proposed to exploit electrical rectiﬁcation in antenna-coupled ﬁeld-effect transistors (FETs) which provide electrically controllable higher-order nonlinearities and temporal resolution on a picosecond scale [1,2]. Such detectors can be operated at room temperature and be used with different pulsed THz radiation sources. Here we will present physical explanation for this phenomenon and will demonstrate its application in nonlinear THz autocorrelation experiments. [1] A. Lisauskas et al., “Field-effect transistors as electrically controllable nonlinear rectifiers for the characterization of terahertz pulses,” APL Photonics, vol. 3, no. 5, p. 051705, May 2018. [2] K. Ikamas, I. Nevinskas, A. Krotkus, and A. Lisauskas, “Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators,” Sensors, vol. 18, no. 11, p. 3735, Nov. 2018.

Conference Presentation

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Alvydas Lisauskas, Kestutis Ikamas, Ignas Nevinskas, Arunas Krotkus, and Hartmut G. Roskos "Electrical nonlinearities in field effect transistors and their applications for terahertz autocorrelation measurements (Conference Presentation)", Proc. SPIE 11124, Terahertz Emitters, Receivers, and Applications X, 111240Z (12 September 2019); https://doi.org/10.1117/12.2531356

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KEYWORDS

Field effect transistors

Sensors

Terahertz radiation

Transistors

Absorption

Interferometry

Mid-IR

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