High-Z metal-based underlayer to improve EUV stochastics (Conference Presentation)

Anuja De Silva; Jennifer Church Church; Dominik Metzler; Luciana Meli; Phil Friddle; Bhaskar Nagabhirava; Rich Wise; Nader Shamma

doi:10.1117/12.2539272

16 October 2019 High-Z metal-based underlayer to improve EUV stochastics (Conference Presentation)

Anuja De Silva, Jennifer Church Church, Dominik Metzler, Luciana Meli, Phil Friddle, Bhaskar Nagabhirava, Rich Wise, Nader Shamma

Author Affiliations +

Proceedings Volume 11147, International Conference on Extreme Ultraviolet Lithography 2019; 111470W (2019) https://doi.org/10.1117/12.2539272
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States

Abstract

Extending extreme ultraviolet (EUV) single exposure patterning to its limits is dependent on eliminating its stochastic defectivity. Along with developments in photoresist platforms, the patterning film stack also needs to be considered. The material immediately underneath the photoresist is expected to have significant impact on both lithographic and pattern transfer performance. By designing the resist substrate interface with high EUV absorbance, there is potential to increase the EUV quantum yield of the exposure process. This paper will demonstrate the patterning of a chemically amplified resist on a high-Z metal-based hardmask. The potential for dose reduction, higher etch selectivity, and defectivity improvement from a high-Z hardmask will be discussed. Deposition-trim etch techniques will be used for decreasing the transfer of stochastic defects to the underlying substrate. Sub-32nm pitch trench patterning, defectivity, and electrical yield for this patterning stack will be highlighted.

Conference Presentation

Citation Download Citation

Anuja De Silva, Jennifer Church Church, Dominik Metzler, Luciana Meli, Phil Friddle, Bhaskar Nagabhirava, Rich Wise, and Nader Shamma "High-Z metal-based underlayer to improve EUV stochastics (Conference Presentation)", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111470W (16 October 2019); https://doi.org/10.1117/12.2539272

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KEYWORDS

Stochastic processes

Extreme ultraviolet

Optical lithography

Extreme ultraviolet lithography

Etching

Photoresist materials

Absorbance

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