CMOS-compatible, plasma beam assisted reactive magnetron sputtered silicon nitride films for photonic integrated circuits

Andreas Frigg; Andreas Boes; Guanghui Ren; Duk-Yong Choi; Silvio Gees; Arnan Mitchell

doi:10.1117/12.2541269

30 December 2019 CMOS-compatible, plasma beam assisted reactive magnetron sputtered silicon nitride films for photonic integrated circuits

Andreas Frigg, Andreas Boes, Guanghui Ren, Duk-Yong Choi, Silvio Gees, Arnan Mitchell

Author Affiliations +

Proceedings Volume 11200, AOS Australian Conference on Optical Fibre Technology (ACOFT) and Australian Conference on Optics, Lasers, and Spectroscopy (ACOLS) 2019; 112001T (2019) https://doi.org/10.1117/12.2541269
Event: ANZCOP, 2019, Melbourne, Australia

Abstract

In this contribution, we demonstrate the deposition of low loss, CMOS-compatible SiN thin-films using plasma beam assisted reactive sputtering for photonic integrated circuits. Plasma beam assistance during the deposition process enabled us to achieve thin-film losses of below 0.1 dB/cm and a surface roughness of R_q of <0.1 nm, while keeping the processing temperatures below 400°C. Propagation losses of 0.9 dB/cm at 1550 nm have been achieved for waveguides with a cross section of 460× 2000 nm (height × width).

Citation Download Citation

Andreas Frigg, Andreas Boes, Guanghui Ren, Duk-Yong Choi, Silvio Gees, and Arnan Mitchell "CMOS-compatible, plasma beam assisted reactive magnetron sputtered silicon nitride films for photonic integrated circuits", Proc. SPIE 11200, AOS Australian Conference on Optical Fibre Technology (ACOFT) and Australian Conference on Optics, Lasers, and Spectroscopy (ACOLS) 2019, 112001T (30 December 2019); https://doi.org/10.1117/12.2541269

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