Effect Of RF Sputtering Parameters On ZnO Films Deposited Onto Inp Substrates

Yan K. Su; Shi L. Chen

doi:10.1117/12.961351

8 January 1990 Effect Of RF Sputtering Parameters On ZnO Films Deposited Onto Inp Substrates

Yan K. Su, Shi L. Chen

Proceedings Volume 1125, Thin Films in Optics; (1990) https://doi.org/10.1117/12.961351
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

ZnO films deposited onto InP substrates by using sputtering has been studied. Several sputtering parameters including RF power, substrate temperature and oxygen content have been investigated to get a better ZnO thin films. The suitable ratio of oxygen and argon makes an important role in getting high guality films. 20% oxygen content is the best one for sputtered ZnO films. From SEM measurements and the etching patterns, a fine dense grain structure with a smooth interface and fine growth pattern can be obtained.

Citation Download Citation

Yan K. Su and Shi L. Chen "Effect Of RF Sputtering Parameters On ZnO Films Deposited Onto Inp Substrates", Proc. SPIE 1125, Thin Films in Optics, (8 January 1990); https://doi.org/10.1117/12.961351

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available