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9 March 2020 High-average-power, mid-infrared, widely tunable, picosecond optical parametric oscillator based on OP-GaAs (Conference Presentation)
Qiang Fu
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Proceedings Volume 11264, Nonlinear Frequency Generation and Conversion: Materials and Devices XIX; 112641C (2020) https://doi.org/10.1117/12.2545223
Event: SPIE LASE, 2020, San Francisco, California, United States
Abstract
This paper reports a high-average-power mid-infrared source based on an orientation-patterned gallium arsenide (OP-GaAs) optical parametric oscillator (OPO) with wide wavelength tunability. An average power of 4.8 W of signal (3093 nm) and 3.5 W of idler (5598 nm) was achieved at a pump power of 25.5 W. Tuning ranges of 2895 nm-3342 nm (signal) and 4935 nm-6389 nm (idler) were obtained. The idler-resonant OPO offered good beam quality of the mid-infrared idler waves with an M2 of 1.1. High-average-power induced thermal effects for the OP-GaAs OPO were observed.
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Qiang Fu "High-average-power, mid-infrared, widely tunable, picosecond optical parametric oscillator based on OP-GaAs (Conference Presentation)", Proc. SPIE 11264, Nonlinear Frequency Generation and Conversion: Materials and Devices XIX, 112641C (9 March 2020); https://doi.org/10.1117/12.2545223
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KEYWORDS
Optical parametric oscillators
Mid-IR
Picosecond phenomena
Gallium arsenide
Optical amplifiers
Optical choppers
Thermal effects
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