Presentation + Paper
2 March 2020 THz emission from semiconductors using excitation by a tilted pulse front
Author Affiliations +
Abstract
We employ tilted-pulse-front techniques to control the propagation direction of the THz pulses emitted from semiconductor photo-switches. In a first step, we successfully demonstrate the manipulation of the THz emission angle from an electrically biased, large-area photoconductive switch on semi-insulating GaAs. With a double-metal waveguide with an optically transparent thin metal window we then show that, at a proper tilt angle of the optical pulse front, the generated THz pulse propagates along the waveguide to radiate off at its end facet. The technique is suitable for optical pumping of THz gain media with short excited-state lifetime, and for THz pulse control and beam steering using any type of coherent THz emitters.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Q. Islam, F. Meng, H. Yuan, and H. G. Roskos "THz emission from semiconductors using excitation by a tilted pulse front", Proc. SPIE 11279, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII, 1127910 (2 March 2020); https://doi.org/10.1117/12.2547307
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Terahertz radiation

Waveguides

Gallium arsenide

Semiconductors

Wave propagation

Semiconducting wafers

Metals

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