Via optimization methodology for enhancing robustness of design at 14/12nm technology node

Xiaojing Su; Libin Zhang; Yayi Wei; Rui Chen; Yajuan Su; Lisong Dong; Chunshan Du; Qijian Wan; Xinyi Hu

doi:10.1117/12.2551902

23 March 2020 Via optimization methodology for enhancing robustness of design at 14/12nm technology node

Xiaojing Su, Libin Zhang, Yayi Wei, Rui Chen, Yajuan Su, Lisong Dong, Chunshan Du, Qijian Wan, Xinyi Hu

Proceedings Volume 11328, Design-Process-Technology Co-optimization for Manufacturability XIV; 1132810 (2020) https://doi.org/10.1117/12.2551902
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

Via location and metal coverage have direct correlation. Optical proximity correction (OPC) always do selective sizing for metal to offer enough via enclosure, such as extending line end or doing external expansion for related metal edge. Hence via poor landing or metal bridging are both potential hotspots. For 14nm technology node and below, process related weak patterns are highly correlated with via locations and corresponding metal dimensions. A via optimization methodology has been put forward to enhance the robustness of design for physical design in fabless. With the aid of lithography check, the yield killers with high potential relativity with vias will be conducted root cause analysis. This paper describes the main solutions for fabless, including pin location blockage, via shift, via shape change, metal sizing change and so on within design rule check (DRC) constraints. The simulation experiment results prove the effective of these solutions due to related simulated yield killers being eliminated.

Citation Download Citation

Xiaojing Su, Libin Zhang, Yayi Wei, Rui Chen, Yajuan Su, Lisong Dong, Chunshan Du, Qijian Wan, and Xinyi Hu "Via optimization methodology for enhancing robustness of design at 14/12nm technology node", Proc. SPIE 11328, Design-Process-Technology Co-optimization for Manufacturability XIV, 1132810 (23 March 2020); https://doi.org/10.1117/12.2551902

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KEYWORDS

Metals

Optical proximity correction

Photovoltaics

Lithography

Double patterning technology

Optical lithography

Yield improvement

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