Laser Microchemistry : A Powerful Tool For VLSI

Didier Tonneau; Yves Guern; Gerard Pelous

doi:10.1117/12.961762

11 October 1989 Laser Microchemistry : A Powerful Tool For VLSI

Didier Tonneau, Yves Guern, Gerard Pelous

Proceedings Volume 1138, Optical Microlithography and Metrology for Microcircuit Fabrication; (1989) https://doi.org/10.1117/12.961762
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

Interconnection direct writing on ICs is possible by localized laser-assisted Chemical Vapor Deposition. Recently we have developed and marketed a new laser microchemistry tool particularly designed for VLSI prototypes rewiring. By dissociating Ni(CO)4 molecules, Ni lines can be written at speeds higher than 5 gm/s under laser induced temperature as low as 400°C. At the same temperature tungsten stripes can be driven from decomposition of WF6-H2 mixtures. However the tungsten deposition rate is about two orders of magnitude lower than the nickel growth rate in the same temperature conditions. The resistivities of the deposits are in both cases around 10 μΩ.cm. Silicon dioxide layers can be promoted from dissociation of a Si2H6-N20 mixture under surface temperature around 500°C. These metal and insulator deposition basic steps have been integrated in a complete metal bridging process suitable for the last interconnection level of a VLSI circuit. This process has been firstly estimated from a functional point of view, by electrical characterizations realized on test patterns entirely drawn by laser chemistry. At least, by measuring the time necessary to perform a metal bridge, the process has been evaluated from an economical point of view.

Citation Download Citation

Didier Tonneau, Yves Guern, and Gerard Pelous "Laser Microchemistry : A Powerful Tool For VLSI", Proc. SPIE 1138, Optical Microlithography and Metrology for Microcircuit Fabrication, (11 October 1989); https://doi.org/10.1117/12.961762

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