III-V/Si integrated photonic devices based on micro transfer printing

Yuxuan Wang; Xiaowen Gu; Guanyu Li; Yuechan Kong

doi:10.1117/12.2559145

17 April 2020 III-V/Si integrated photonic devices based on micro transfer printing

Yuxuan Wang, Xiaowen Gu, Guanyu Li, Yuechan Kong

Proceedings Volume 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications; 114550J (2020) https://doi.org/10.1117/12.2559145
Event: Sixth Symposium on Novel Photoelectronic Detection Technology and Application, 2019, Beijing, China

Abstract

A heterogeneous photonic integration of silicon photonic devices and III-V compound semiconductor photodetector (PD) is demonstrated by micro transfer printing (μ-TP). Via transfer printing, InP/InGaAs PIN PD is directly bonded on the top of silicon grating coupler by ultra-thin DVS-BCB adhesion layer. 0.4A/W of photo-responsibility @1550nm and ~25GHz of -3dB bandwidth are measured on printed PD. No deterioration in coupling loss is detected in the printed PD on the silicon gratings coupler with alignment accuracy of ±1μm. This technique enables a feasible route to photonic integrated circuits.

Citation Download Citation

Yuxuan Wang, Xiaowen Gu, Guanyu Li, and Yuechan Kong "III-V/Si integrated photonic devices based on micro transfer printing", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 114550J (17 April 2020); https://doi.org/10.1117/12.2559145

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