Laser parameters dependence of pulse laser surface treatment of silicon

Tongyao Li; Yao Ma

doi:10.1117/12.2564989

17 April 2020 Laser parameters dependence of pulse laser surface treatment of silicon

Tongyao Li, Yao Ma

Proceedings Volume 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications; 114554U (2020) https://doi.org/10.1117/12.2564989
Event: Sixth Symposium on Novel Photoelectronic Detection Technology and Application, 2019, Beijing, China

Abstract

With the development of laser technology, the application range of strong lasers has expanded from the scientific field to the fields of industry, national defense and military, which has become an important pillar of contemporary new technology. The interaction between laser and matter makes people understand and analyze the properties of the target, which promotes the nature of materials in contemporary science. Silicon is a good semiconductor material that can be used as a base material and a conductive material for optical devices. Single crystal silicon is susceptible to damage such as cracking, melting, and ablation under the action of laser light. The main reason is that the single crystal silicon material absorbs the laser energy, causing the internal temperature distribution to be uneven, thereby affecting the surface properties of the silicon. Therefore, in this paper, the temperature changes generated by the silicon surface under different incident laser energies, different beam radius, and different pulse length. Theoretically based on thermal conduction theory, elastic mechanics theory, using COMSOL Multiphysics to obtain: 3D-simulation model obtained by interaction of laser and silicon under different conditions. The data was sorted and analyzed by Origin to obtain the variation of silicon surface temperature under different conditions. The silicon surface temperature changes were investigated for different incident laser energies, different pulse lengths, and different beam radius. Through the data summary law, further explore the relevant properties and application directions of inorganic non-metals.

Citation Download Citation

Tongyao Li and Yao Ma "Laser parameters dependence of pulse laser surface treatment of silicon", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 114554U (17 April 2020); https://doi.org/10.1117/12.2564989

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KEYWORDS

Silicon

Crystals

Semiconductor lasers

Laser crystals

Laser energy

Pulsed laser operation

Temperature metrology

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