Hybrid graphene photodetectors were prepared with endohedral fullerenes deposited on graphene using electrophoretic methods. Endohedral Sc3N@C80, which acts as an electron acceptor was used, and the ensuing electronic and optoelectronic properties were measured. Another endohedral fullerene, La@C82 adsorbed on graphene acted as an electron donor. Upon optical illumination, for the Sc3N@C80-graphene hybrid, the photoinduced free holes are injected into graphene, increasing the hole carrier concentration in graphene, while the photoexcited electrons remain in Sc3N@C80. We will discuss the photodetector response of these 0D-2D systems with both Sc3N@C80-graphene and La@C82-graphene hybrids. The exceptional performance gains achieved with both types of hybrid structures confirms the potential of endohedrals to dope graphene for high performance optoelectronic devices using a facile and scalable fabrication process.
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